As new energy vehicles, photovoltaic and energy storage systems, industrial automation, telecommunications power supplies, and data centers continue to develop rapidly, power systems are evolving toward higher power, greater efficiency, improved reliability, and increased power density.

In high-power applications, devices must not only handle large operating currents but also withstand reverse voltages generated during turn-off, surge currents, inductive voltage spikes, and complex thermal conditions. Increasing system output while effectively reducing conduction and switching losses has therefore become a key challenge in power supply design.

To meet the requirements of high-current and high-reverse-voltage applications, Hertz continues to develop and apply highly efficient and reliable power solutions based on its portfolio of MOSFETs, IGBTs, SiC devices, GaN devices, and SBDs. The company provides comprehensive services ranging from power device selection to system-level application support.

High-Current Applications Place Greater Demands on Power Devices

In server power supplies, industrial power systems, energy storage converters, charging equipment, motor drives, and high-power DC-DC converters, power devices must frequently perform energy conversion and switching control.

As system current increases, device on-resistance, saturation voltage, chip area, package structure, and thermal conditions directly affect overall efficiency and operating temperature.

When conduction losses are high, prolonged high-current operation can cause significant temperature rise. This not only reduces power conversion efficiency but may also shorten device life and affect overall system stability.

High-current power supply design therefore needs to focus on:

• Reducing conduction and switching losses;

• Increasing the current-carrying capability of chips and packages;

• Optimizing thermal paths and heat-management design;

• Ensuring stable operation under high temperatures and heavy loads;

• Improving parameter consistency and current sharing in parallel applications.

By continuously optimizing power device design, wafer processes, and packaging applications, Hertz works to improve product efficiency, stability, and reliability under high-current operating conditions, providing strong support for high-power-density systems.

High Reverse Voltage Challenges System Reliability

In applications involving inductive loads such as motors, inductors, and transformers, high reverse-induced voltages may be generated when power devices are switched off.

Without adequate absorption, clamping, and protection, transient voltages may exceed the device’s rated limits, resulting in performance degradation or even breakdown failure.

A high-reverse-voltage power solution requires not only sufficient voltage margin but also careful consideration of avalanche capability, reverse-recovery characteristics, parasitic parameters, switching speed, and system protection.

Based on different power topologies and application scenarios, Hertz provides corresponding device-selection guidance:

For medium- and low-voltage, high-current, and high-frequency switching applications, low-on-resistance MOSFETs can help reduce conduction losses and improve switching efficiency.

For medium- and high-voltage, high-power conversion applications, suitable IGBTs or high-voltage MOSFETs can be selected according to operating frequency, output power, and thermal conditions.

For high-frequency, high-temperature, high-voltage, and high-efficiency applications, SiC devices can help reduce switching losses, shrink cooling-system size, and increase power density.

SBDs and other rectifier devices can be used for freewheeling, rectification, and protection, helping improve reverse-recovery performance while reducing energy loss and voltage stress during switching.

Coordinated Power Devices Build Efficient Power Systems

High-current and high-reverse-voltage power systems generally do not rely on a single device. Main switching devices, rectifiers, freewheeling devices, gate-drive circuits, protection circuits, and thermal systems must work together.

Hertz continues to expand its power semiconductor portfolio for different power levels and application requirements, providing diverse device options for power system design.

MOSFETs: Low Losses and High-Frequency Switching

MOSFETs feature simple gate driving and fast switching speeds, making them suitable for switched-mode power supplies, synchronous rectification, motor drives, DC-DC conversion, and power management.

In high-current applications, low on-resistance helps reduce conduction losses. In high-frequency applications, parameters such as gate charge, output capacitance, and reverse-recovery characteristics influence switching losses and overall efficiency.

IGBTs: Supporting Medium- and High-Voltage, High-Power Applications

IGBTs combine strong current-handling capability with high voltage resistance. They are suitable for industrial frequency converters, motor control, charging equipment, welding power supplies, and certain new energy conversion systems.

Selecting the appropriate IGBT chip, package, and gate-drive parameters for a specific operating frequency and output power helps balance conduction losses, switching losses, and system reliability.

SiC: Advancing Efficiency and Power Density

SiC power devices are well suited to high-voltage, high-frequency, and high-temperature applications. They play an important role in new energy vehicles, photovoltaic inverters, energy storage converters, charging modules, and industrial power supplies.

By adopting SiC devices, power systems can operate at higher switching frequencies while reducing the size of magnetic components and cooling assemblies, enabling lighter, smaller, and more efficient equipment.

SBDs: Improving Rectification and Reverse-Recovery Performance

SBDs offer low forward voltage drop and fast switching speed and can be used in high-frequency rectification, freewheeling, and protection circuits.

In certain high-voltage and high-frequency applications, SiC SBDs can effectively reduce reverse-recovery losses and lower the current and voltage stress placed on main switching devices, thereby improving system efficiency and stability.

Professional Support from Device Selection to System Application

The actual performance of a power device is determined not only by individual datasheet parameters but also by operating voltage, load current, switching frequency, driving method, PCB layout, parasitic inductance, cooling conditions, and ambient temperature.

High-current and high-reverse-voltage power supply design must therefore be evaluated from a system-level perspective.

Guided by customer application requirements, Hertz provides technical support for device selection, gate-drive optimization, thermal design, parallel operation, and system protection.

During product selection, the company recommends evaluating:

• Operating voltage and transient-voltage margin;

• Continuous, peak, and surge current;

• On-resistance or saturation voltage;

• Switching frequency and switching losses;

• Junction temperature, thermal resistance, and cooling structure;

• Avalanche and short-circuit withstand capability;

• Reverse-recovery and parasitic parameters;

• Package type and PCB layout requirements.

Matching product parameters with actual operating conditions can help reduce design risks while improving power efficiency and long-term operating reliability.

Rigorous Quality Management Ensures Stable Operation

High-power equipment often operates continuously for long periods and therefore places demanding requirements on the stability, consistency, and service life of power devices.

Hertz remains committed to product quality and continues to improve its management systems covering product design, wafer manufacturing, packaging and testing, and quality verification. The company pays particular attention to device voltage capability, current capacity, thermal performance, switching characteristics, and long-term reliability.

Hertz brings together professionals in semiconductor wafer design, device development, and packaging manufacturing. Supported by extensive production experience, the company strictly controls product quality and strives to ensure stable device performance in complex power environments.

Building the Future with Chips and Enabling Efficient Energy Applications

As the power requirements of end-use equipment continue to rise, high current and high reverse voltage are becoming critical technical requirements for an increasing number of power systems.

Hertz will continue to focus on the power semiconductor sector and pursue technological innovation across MOSFETs, IGBTs, SiC devices, GaN devices, and SBDs. The company will continuously improve product efficiency, voltage resistance, current-carrying capability, and reliability.

Upholding its philosophy of “Building the Future with Chips, Advancing through Innovation,” Hertz will actively serve markets including new energy vehicles, photovoltaic and energy storage systems, industrial control, telecommunications power supplies, data centers, and consumer electronics, providing customers with more efficient, stable, and reliable power semiconductor products and power solutions.